Atomic Layer Deposition (ALD)

Arradiance Gemstar Atomic Layer Deposition SystemARRADIANCE® manufactures 150mm (GemStar 6 XT) and 200mm (GemStar 8 XT) research-grade Atomic Layer Deposition (ALD) systems for a variety of applications, in a very compact form factor.

These systems are designed to deposit defect free resistive and emissive coatings that are uniform in thickness, even deep inside high aspect ratio (HAR) structures such as Microchannel Plates or Channel Electron Multipliers.

The ability to deposit such high quality films on substrates with ultra-high aspect ratios is a key feature of ARRADIANCE® systems.

The GemsStar systems can be provided with optional Plasma Enhanced Atomic Layer Deposition (PE-ALD) which helps to precisely and rapidly deposit ultra-thin, low-defect, high-k dielectric or liner/barrier films on the wafer surface. By utilizing a remote plasma to pre-dissociate active chemical species, film properties and deposition rates can be optimized.

gemstar xt-p

Supported processes:

MgO, CaO, CaHfO, SrO, Sc2O3, Y2O3, La2O3, LaF3, TiO2, TiN, ZrO2, Zr3N4, HfO2, Hf3N4, V2Ox, Nb2O5, Ta2O5, TaN, Mo, MoN, WOx, W, MnO, MnS, Fe2O3, Ru, RuOx, Co, CoN, Rh2O3, Rh, Ir, NiO, NiNx, Ni, Pt, PtOx, Pd, Cu, CuOx, CuNx, CuS, ZnO, ZnS, ZnF, CdS, Al2O3, AlN, Ga2O3, In2O3, SiO2, SnO2, SnS, PbO, PbS, Bi2O3, Pr2O3, Ce2O3, Sm2O3, Eu2O3, Gd2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3, Lu2O3.


  • 8 ALD precursor ports
  • Up to 300°C dual zone ALD process reactor with accurate substrate thermal control
  • Up to 200°C dual zone manifolds provides uniform gas distribution over the substrate
  • Up to 200°C 4 zone ALD insolated bottles jackets
  • Excelent coating capabilities in high aspect ratio
  • Easy to use software interface
  • Easy to maintain with diagnostic system logging and modular system design.
  • Small footprint with superb process results

load lock

  • Load Lock Option
  • Optional Up to 450°C chuck
  • Glove Box Interface Option

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